| 品牌SPECTEK | 有效期至长期有效 |
最后更新2024-11-28 10:02 |
| Product CodeDDR3 |
Density4Gb |
Voltage1.5V |
大S PRN512M8V00HG8GQF-125
DDR3 SDRAM
PRN512M8V00HG8GQF-125
PRN 512M8 – 64 Meg x 8 x 8 Banks
Features
Vdd = VddQ = 1.5V +0.075V
1.5V center-terminated push / pull I/O
Differential bidirectional data strobe
8n-bit prefetch architecture
Differential clock inputs (CK, CK#)
8 internal banks
Nominal and dynamic on-die termination (ODT)
For data, strobe, and mask signals
Programmable CAS READ latency (CL)
Posted CAS additive latency (AL)
Programmable CAS WRITE latency (CWL) based on
tCK
Fixed burst length (BL) of 8 and burst chop (BC) of 4
(via the mode register set [MRS]
Selectable BC4 or BL8 on-the-fly (OTF)
Self refresh mode
Tc of 0C to +95C
64ms 8192 cycle refresh at 0C to 85C
32ms 8192 cycle refresh at +85C to +95C
Self refresh temperature (SRT)
Write leveling
Multipurposes register
Output driver calibration
客服热线：
手机版
二维码
&tel=15914053950&work=0755-83685114&email=&org=深圳市鑫融宸电子有限公司&adr=深圳市龙华区民治街道上芬社区人民路恒江大厦1302&url=https://www.oemao.com/com/xrc01/)
