品牌:RAYSON晶存
VDD1:1.70-1.95V
• Frequency range:2133-10 MHz
Operating temperature range:-40°C to + 95°C
起订:3PCS
供应:9000PCS
发货:3天内
立即购买
Features
This data sheet is for LPDDR4X and LPDDR4
unified product based on LPDDR4X information.
As for LPDDR4 setting, refer to General LPDDR4
Specification at the end of this datasheet.
• Ultra-low-voltage core and I/O power supplies
- V
DD1
= 1.70-1.95V; 1.80V nominal
- V
DD2
= 1.06-1.17V; 1.10V nominal
- V
DDQ
= 0.57-0.65V; 0.60V nominal
Or V
DDQ
= 1.06-1.17V; 1.10V nominal
• Frequency range
- 2133-10 MHz (data rate range per pin:4266-20
Mb/s)
• 16 n prefetch DDR architecture
• 8 internal banks per channel for concurrent
operation
• Single-data-rate CMD / ADR entry
• Bidirectional / differential data strobe per byte
lane
• Programmable READ and WRITE latencies (RL
/ WL)
• Programmable and on-the-fly burst lengths (BL =
16, 32)
• Directed per-bank refresh for concurrent bank
operation and ease of command scheduling
• Up to 8.53 GB / s per die x16 channel
• On-chip temperature sensor to control self refresh
rate
• Partial-array self refresh (PASR)
• Selectable output drive strength (DS)
• Clock-stop capability
• RoHS-compliant, “green” packaging
• Programmable V
SS
(ODT) termination
• Single-ended CK and DQS support